150 a thyristor/ thyristor bulletin i27122 rev. c 04/02 1 irkt152/04 int-a-pak tm power module i t(av) 150 a @ t c 85 c i t(rms) 330 a i tsm @ 50hz 4000 @ 60hz 4200 i 2 t @ 50hz 80 ka 2 s @ 60hz 73 i 2 t 800 ka 2 s v rrm 400 v t stg range - 40 to 150 c t j range - 40 to 125 major ratings and characteristics parameters irkt152/04 units features electrically isolated by dbc ceramic ( al 2 o 3 ) 3500 v rms isolating voltage industrial standard package high surge capability glass passivated chips simple mounting ul e78996 approved applications battery charges welders power converters case style new int-a-pak
irkt152/04 2 bulletin i27122 rev. c 04/02 i t(av) max. average on-state current 150 a 180 conduction half sine wave @ case temperature 85 c i t(rms) maximum rms on-state current 330 a as ac switch i tsm maximum peak, one-cycle 4000 a t = 10ms no voltage on-state, non-repetitive 4200 t = 8.3ms reapplied surge current 3350 t = 10ms 100% v rrm 3500 t = 8.3ms reapplied i 2 t maximum i 2 t for fusing 80 ka 2 s t = 10ms no voltage 73 t = 8.3ms reapplied 56 t = 10ms 100% v rrm 51 t = 8.3ms reapplied i 2 t maximum i 2 t for fusing 800 ka 2 s t = 0.1 to 10ms, no voltage reapplied v t(to) value of threshold voltage 0.82 v @ t j max. r t on-state slope resistance 1.44 m ? v tm maximum on-state voltage drop 1.44 v i pk = 470a, t j = 25c i h maximum holding current 200 ma t j = 25 o c, anode supply = 6v, resistive load, gate open circuit i l maximum latching current 400 t j = 25 o c, anode supply = 6v, resistive load on-state conduction blocking electrical specifications voltage ratings parameter irkt152/04 units conditions type number v rrm /v drm , maximum repetitive v rsm /v dsm , maximum non-repetitive i rrm / i drm peak reverse voltage peak reverse voltage @ 125c vvm a irkt152/04 400 500 50 t gd typical delay time 1 t j = 25 o c gate current=1a dig/dt=1a/s t gr typical rise time 2 s t j = 25 o c vd=0,67% v drm t q typical turn-off time 50 - 200 i tm = 300 a; -di/dt = 15 a/s; t j = t j max v r = 50 v; dv/dt = 20 v/s; gate 0 v, 100 ? switching i rrm maximum peak reverse and 50 ma t j = 125 o c i drm off-state leakage current v ins rms isolation voltage 3500 v 50hz, circuit to base, all terminals shorted, t = 1s dv/dt critical rate of rise of off-state voltage 1000 v/s t j = t j max., exponential to 67% rated v drm sine half wave, initial t j = t j max
irkt152/04 3 bulletin i27122 rev. c 04/02 thermal and mechanical specifications triggering p gm max. peak gate power 12 w tp 5ms, t j = t j max. p g(av) max. average gate power 3 w f=50hz, t j = t j max. i gm max. peak gate current 3 a tp 5ms, t j = t j max. -v gt max. peak negative 10 v gate voltage v gt max. required dc gate 4 v t j = - 40c anode supply = 6v, resistive voltage to trigger 2.5 t j = 25c load; ra = 1 ? 1.7 t j = t j max. i gt max. required dc gate 270 t j = - 40c anode supply = 6v, resistive current to trigger 150 ma t j = 25c load; ra = 1 ? 80 t j = t j max. v gd max. gate voltage 0.3 v @ t j = t j max., rated v drm applied that will not trigger i gd max. gate current 10 ma that will not trigger di/ dt max. rate of rise of 300 a/s @ t j = t j max., i tm = 400a rated v drm applied turned-on current parameter irkt152/04 units conditions t j max. junction operating -40 to 125 c temperature range t stg max. storage temperature -40 to 150 c range r thjc max. thermal resistance, 0.18 k/w dc operation, per junction junction to case r thcs max. thermal resistance, 0.05 k/w mounting surface smooth, flat and greased case to heatsink per module t mounting iap to heatsink 4 to 6 nm torque 10% busbar to iap 4 to 6 wt approximate weight 200 (7.1) g(oz) case style new int-a-pak a mounting compound is recommended and the torque should be rechecked after a period of 3 hours to allow for the spread of the compound. lubricated threads. parameter irkt152/04 units conditions sinusoidal conduction @ t j max. rectangular conduction @ t j max. devices units 180 o 120 o 90 o 60 o 30 o 180 o 120 o 90 o 60 o 30 o irkt152/04 0.007 0.010 0.013 0.016 0.017 0.009 0.012 0.014 0.016 0.017 k/w ? r conduction (per junction) (the following table shows the increment of thermal resistance r thjc when devices operate at different conduction angles than dc)
irkt152/04 4 bulletin i27122 rev. c 04/02 outline table all dimensions are in millimeters 5 4 3 6 7 1 2 1 23 1 - module type 2 - circuit configuration 3 - current rating: i t(av) 4 - voltage code: code x 100 = v rrm 4 device code ordering information table irk t 152 / 04
irkt152/04 5 bulletin i27122 rev. c 04/02 fig. 1 - current ratings characteristics maximum allowable case temperature (c) fig. 2 - current ratings characteristics average on-state current (a) maximum allowable case temperature (c) maximum average on-state power loss (w) average on-state current (a) fig. 3 - forward power loss characteristics maximum average on-state power loss (w) average on-state current (a) fig. 4 - forward power loss characteristics fig.5 - maximum non-repetitive surge current fig. 6 - maximum non-repetitive surge current number of equal amplitude half cycle current pulses (n) peak half sine wave on-state current (a) pulse train duration (s) peak half sine wave on-state current (a) average on-state current (a) 80 90 100 110 120 130 0 20 40 60 80 100 120 140 160 30? 60? 90? 120? 180? conduction angle irkt152 rthjc (dc) = 0.182 k/w 60 70 80 90 100 110 120 130 0 50 100 150 200 250 30 ? 60 ? 90 ? 180 ? dc 120 ? irkt152 rthjc (dc) = 0.182 k/w conduction period 0 20 40 60 80 100 120 140 160 180 200 220 0 20 40 60 80 100 120 140 160 rms limit conduction angle 180 ? 120 ? 90 ? 60 ? 30 ? irkt152 tj = 180 ? c 0 50 100 150 200 250 300 0 50 100 150 200 250 dc 180 ? 120 ? 90 ? 60 ? 30 ? rms limit conduction period irkt152 tj = 125 ? c 1600 1800 2000 2200 2400 2600 2800 3000 3200 3400 3600 1 10 100 at any rated load condition and with rated vrrm applied following surge. initial tj = 125 ? c @ 60 hz 0.0083 s @ 50 hz 0.0100 s irkt152 per junction 1500 2000 2500 3000 3500 4000 4500 0.01 0.1 1 maximum non repetitive surge current of conduction may not be maintained. irkt152 per junction versus pulse train duration. control initial tj = 125 ? c no voltage reapplied rated vrrm reapplied
irkt152/04 6 bulletin i27122 rev. c 04/02 maximum allowable ambient temperature (c) fig.7 - on state power loss characteristics maximum total on-state power loss (w) total rms output current (a) fig.8 - on state power loss characteristics maximum total power loss (w) total output current (a) maximum allowable ambient temperature (c) fig. 9 - on state power loss characteristics maximum total power loss (w) total output current (a) maximum allowable ambient temperature (c) 0 25 50 75 100 125 0.04 k/w 0.08 k/w 0.12 k/w 0.16 k/w 0.4 k/w 0.25 k/w 0.6 k/w 1 k/w rthsa = 0.01 k/w - delta r 0 25 50 75 100 125 0.04 k/w 0.12 k/w 0.2 k/w 0.35 k/w 0.6 k/w rthsa = 0.01 k/w - delta r 0.08 k/w 0 100 200 300 400 500 600 700 800 900 0 50 100 150 200 250 300 2 x irkt152 single phase bridge connected tj = 125 ? c 180 ? (sine) 180 ? (rect) 0 25 50 75 100 125 0.08 k/w 0.1 k/w 0.16 k/w 0.25 k/w 0.4 k/w 1 k/w rthsa = 0.04 k/w - delta r 0 200 400 600 800 1000 1200 1400 0 100 200 300 400 500 120 ? (rect) 0 100 200 300 400 500 0 50 100 150 200 250 300 350 180 ? 120 ? 90 ? 60 ? 30 ? conduction angle irkt152 per module tj = 125 ? c
irkt152/04 7 bulletin i27122 rev. c 04/02 fig. 10 - on-state voltage drop characteristics instantaneous on-state voltage (v) instantaneous on-state current (a) fig. 11 - thermal impedance zthjc characteristics square wave pulse duration (s) transient thermal impedance z thjc (k/w) ir world headquarters: 233 kansas st., el segundo, california 90245, usa tel: (310) 252-7105 tac fax: (310) 252-7309 visit us at www.irf.com for sales contact information. 04/02 data and specifications subject to change without notice. this product has been designed and qualified for multiple level. qualification standards can be found on ir's web site. 0.001 0.01 0.1 1 0.001 0.01 0.1 1 steady state value rthjc = 0.182 k/w (dc operation) irkt152 fig.12 - gate characteristics instantaneous gate current (a) instantaneous gate voltage (v) 0.1 1 10 100 0.001 0.01 0.1 1 10 100 1000 (b) (a) rectangular gate pulse (4) (3) (2) (1) tj = -40 ? c tj = 25 ? c tj = 125 ? c a)recommended load line for b)recommended load line for vgd igd (1) pgm = 200 w, tp = 300 s (2) pgm = 60 w, tp = 1 ms (3) pgm = 30 w, tp = 2 ms (4) pgm = 12 w, tp = 5 ms <= 30% rated di/dt: 15 v, 40 ohms tr = 1 s, tp >= 6 s rated di/dt: 20 v, 20 ohms tr = 0.5 s, tp >= 6 s frequency limited by pg(av) irkt152 1 10 100 1000 0.5 1 1.5 2 2.5 irkt152 per junction tj = 25 ? c tj = 125 ? c
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